IRF643
vs
RFP10N12
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
unknown
Avalanche Energy Rating (Eas)
580 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
120 V
Drain Current-Max (ID)
16 A
10 A
Drain-source On Resistance-Max
0.22 Ω
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-204AA
JESD-30 Code
R-PSFM-T3
O-MBFM-P2
JESD-609 Code
e0
e0
Moisture Sensitivity Level
NOT SPECIFIED
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
METAL
Package Shape
RECTANGULAR
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
64 A
25 A
Qualification Status
COMMERCIAL
COMMERCIAL
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
PIN/PEG
Terminal Position
SINGLE
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Compare IRF643 with alternatives
Compare RFP10N12 with alternatives