IRF640STRL
vs
IRF640SPBF
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
VISHAY SILICONIX
|
VISHAY SILICONIX
|
Part Package Code |
D2PAK
|
D2PAK
|
Package Description |
TO-263, D2PAK-3
|
ROHS COMPLIANT, TO-263, D2PAK-3
|
Pin Count |
4
|
4
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
580 mJ
|
580 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
18 A
|
18 A
|
Drain-source On Resistance-Max |
0.18 Ω
|
0.18 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
TO-263AB
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
72 A
|
72 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Samacsys Manufacturer |
|
Vishay
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare IRF640STRL with alternatives
Compare IRF640SPBF with alternatives