IRF640S
vs
IRF642-010
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
PHILIPS SEMICONDUCTORS
INFINEON TECHNOLOGIES AG
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE
Drain Current-Max (ID)
18 A
16 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
e3
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
Surface Mount
YES
NO
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN OVER NICKEL
Base Number Matches
8
2
Case Connection
DRAIN
DS Breakdown Voltage-Min
200 V
Drain-source On Resistance-Max
0.22 Ω
JESD-30 Code
R-PSFM-T3
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Pulsed Drain Current-Max (IDM)
64 A
Qualification Status
Not Qualified
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Element Material
SILICON