IRF640S
vs
IRF640NSTRLPBF
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
PHILIPS SEMICONDUCTORS
|
INTERNATIONAL RECTIFIER CORP
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
18 A
|
18 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
125 W
|
150 W
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn) - with Nickel (Ni) barrier
|
| Base Number Matches |
8
|
2
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
D2PAK
|
| Package Description |
|
LEAD FREE, PLASTIC, D2PAK-2/3
|
| Pin Count |
|
3
|
| HTS Code |
|
8541.29.00.95
|
| Additional Feature |
|
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
|
| Avalanche Energy Rating (Eas) |
|
247 mJ
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
200 V
|
| Drain-source On Resistance-Max |
|
0.15 Ω
|
| JEDEC-95 Code |
|
TO-263AB
|
| JESD-30 Code |
|
R-PSSO-G2
|
| Moisture Sensitivity Level |
|
1
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Pulsed Drain Current-Max (IDM) |
|
72 A
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare IRF640NSTRLPBF with alternatives