IRF640PBF vs YTA640 feature comparison

IRF640PBF Vishay Intertechnologies

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YTA640 Toshiba America Electronic Components

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC TOSHIBA CORP
Part Package Code TO-220AB
Package Description ROHS COMPLIANT PACKAGE-3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Factory Lead Time 17 Weeks, 3 Days
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 580 mJ 166 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 18 A 15 A
Drain-source On Resistance-Max 0.18 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A 45 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
Power Dissipation Ambient-Max 80 W

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