IRF640NS vs IRF642 feature comparison

IRF640NS International Rectifier

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IRF642 Harris Semiconductor

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP HARRIS SEMICONDUCTOR
Part Package Code D2PAK
Package Description PLASTIC, D2PAK-2/3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 247 mJ 580 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 18 A 16 A
Drain-source On Resistance-Max 0.15 Ω 0.22 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 125 W
Pulsed Drain Current-Max (IDM) 72 A 64 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 15
Power Dissipation Ambient-Max 125 W
Turn-off Time-Max (toff) 122 ns
Turn-on Time-Max (ton) 98 ns

Compare IRF640NS with alternatives

Compare IRF642 with alternatives