IRF640FI
vs
IRFS541
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
STMICROELECTRONICS
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code |
SFM
|
SFM
|
Package Description |
TO-220, 3 PIN
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
50 mJ
|
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
200 V
|
80 V
|
Drain Current-Max (ID) |
10 A
|
17 A
|
Drain-source On Resistance-Max |
0.18 Ω
|
0.077 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
150 pF
|
|
JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
40 W
|
|
Power Dissipation-Max (Abs) |
40 W
|
40 W
|
Pulsed Drain Current-Max (IDM) |
72 A
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
190 ns
|
|
Turn-on Time-Max (ton) |
185 ns
|
|
Base Number Matches |
1
|
1
|
|
|
|
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Compare IRFS541 with alternatives
-
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-
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-
IRFS541 vs
-
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-
IRFS541 vs International Rectifier
-
IRFS541 vs Transferred
-
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-
IRFS541 vs https://4donline.ihs.com/images/VipMasterIC/IC/SGST/SGSTS45508/SGSTS45508-1.pdf
-
IRFS541 vs BUK445-200