IRF633-010
vs
RFP2N18
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
HARRIS SEMICONDUCTOR
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
180 V
Drain Current-Max (ID)
7.3 A
2 A
Drain-source On Resistance-Max
0.6 Ω
3.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
29 A
5 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
HTS Code
8541.29.00.95
Feedback Cap-Max (Crss)
25 pF
JEDEC-95 Code
TO-220AB
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
25 W
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
65 ns
Turn-on Time-Max (ton)
55 ns
Compare IRF633-010 with alternatives
Compare RFP2N18 with alternatives