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IRF631-001 vs IRF631 feature comparison

IRF631-001 Infineon Technologies AG

Buy Now Datasheet

IRF631 Texas Instruments

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 9 A 9 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN OVER NICKEL Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON
Base Number Matches 2 20
Package Description ,
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 75 W
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

Compare IRF631-001 with alternatives

Compare IRF631 with alternatives