IRF630S/T3 vs IRF630NSTRLPBF feature comparison

IRF630S/T3 NXP Semiconductors

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IRF630NSTRLPBF International Rectifier

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS INTERNATIONAL RECTIFIER CORP
Part Package Code SOT D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2 LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3 3
Manufacturer Package Code SOT404
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 250 mJ 94 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 9 A 9.3 A
Drain-source On Resistance-Max 0.4 Ω 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 36 A 37 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Pbfree Code Yes
Rohs Code Yes
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
JEDEC-95 Code TO-263AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 82 W
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Time@Peak Reflow Temperature-Max (s) 30

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Compare IRF630NSTRLPBF with alternatives