IRF630NSTRRPBF
vs
IRF630S
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Part Package Code
D2PAK
Package Description
LEAD FREE, PLASTIC, D2PAK-3
Pin Count
3
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
94 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
9.3 A
9 A
Drain-source On Resistance-Max
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
82 W
Pulsed Drain Current-Max (IDM)
37 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
7
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