IRF620B vs STD5NE10T4 feature comparison

IRF620B Rochester Electronics LLC

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STD5NE10T4 STMicroelectronics

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC STMICROELECTRONICS
Part Package Code TO-220AB TO-252AA
Package Description TO-220, 3 PIN DPAK-3
Pin Count 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Rating (Eas) 65 mJ 25 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 100 V
Drain Current-Max (ID) 5 A 5 A
Drain-source On Resistance-Max 0.8 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-252AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A 20 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO YES
Terminal Finish NOT SPECIFIED TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Rohs Code Yes
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Case Connection DRAIN
JESD-609 Code e0
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 25 W

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