IRF612
vs
STP4N20
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
STMICROELECTRONICS
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
2.6 A
4 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
e3
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
43 W
60 W
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN
Base Number Matches
15
1
Pbfree Code
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Samacsys Manufacturer
STMicroelectronics
Avalanche Energy Rating (Eas)
150 mJ
DS Breakdown Voltage-Min
200 V
Drain-source On Resistance-Max
1.5 Ω
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Pulsed Drain Current-Max (IDM)
16 A
Qualification Status
Not Qualified
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare IRF612 with alternatives
Compare STP4N20 with alternatives