IRF610B vs SPP16N50C3 feature comparison

IRF610B Rochester Electronics LLC

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SPP16N50C3 Rochester Electronics LLC

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Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ROCHESTER ELECTRONICS LLC
Part Package Code SFM TO-220AB
Package Description TO-220, 3 PIN GREEN, PLASTIC, TO-220, 3 PIN
Pin Count 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Rating (Eas) 40 mJ 460 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 500 V
Drain Current-Max (ID) 3.3 A 16 A
Drain-source On Resistance-Max 1.5 Ω 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220 TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e3
Moisture Sensitivity Level NOT SPECIFIED NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 10 A 48 A
Qualification Status COMMERCIAL COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN LEAD MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Additional Feature AVALANCHE RATED
Case Connection DRAIN

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