IRF610B vs NDB706AL feature comparison

IRF610B Rochester Electronics LLC

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NDB706AL National Semiconductor Corporation

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC NATIONAL SEMICONDUCTOR CORP
Part Package Code SFM
Package Description TO-220, 3 PIN SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown unknown
Avalanche Energy Rating (Eas) 40 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 60 V
Drain Current-Max (ID) 3.3 A 75 A
Drain-source On Resistance-Max 1.5 Ω 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220 TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 10 A 225 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Feedback Cap-Max (Crss) 800 pF
Operating Temperature-Max 175 °C
Power Dissipation Ambient-Max 150 W
Turn-off Time-Max (toff) 550 ns
Turn-on Time-Max (ton) 640 ns

Compare IRF610B with alternatives

Compare NDB706AL with alternatives