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IRF543 vs IRF541 feature comparison

IRF543 STMicroelectronics

Buy Now Datasheet

IRF541 Intersil Corporation

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer STMICROELECTRONICS INTERSIL CORP
Part Package Code SFM
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature FAST SWITCHING
Case Connection ISOLATED DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V 80 V
Drain Current-Max (ID) 25 A 28 A
Drain-source On Resistance-Max 0.1 Ω 0.077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 150 W
Pulsed Drain Current-Max (IDM) 100 A 110 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 230 mJ
Power Dissipation Ambient-Max 150 W
Turn-off Time-Max (toff) 135 ns
Turn-on Time-Max (ton) 133 ns
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

Compare IRF543 with alternatives

Compare IRF541 with alternatives