IRF540NL
vs
2SK3647-01
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
FUJI ELECTRIC CO LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
33 A
|
30 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
1
|
| Package Description |
|
CHIP CARRIER, S-XBCC-N4
|
| Pin Count |
|
4
|
| Avalanche Energy Rating (Eas) |
|
278 mJ
|
| Case Connection |
|
DRAIN
|
| Drain-source On Resistance-Max |
|
0.044 Ω
|
| JESD-30 Code |
|
S-XBCC-N4
|
| Number of Terminals |
|
4
|
| Package Body Material |
|
UNSPECIFIED
|
| Package Shape |
|
SQUARE
|
| Package Style |
|
CHIP CARRIER
|
| Pulsed Drain Current-Max (IDM) |
|
120 A
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
NO LEAD
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare 2SK3647-01 with alternatives