IRF530N vs IRF530NPBF feature comparison

IRF530N NXP Semiconductors

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IRF530NPBF International Rectifier

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB TO-220AB
Package Description PLASTIC, TO-220AB, 3 PIN LEAD FREE PACKAGE-3
Pin Count 3 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer NXP
Avalanche Energy Rating (Eas) 150 mJ 93 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 17 A 17 A
Drain-source On Resistance-Max 0.11 Ω 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 63 W 70 W
Pulsed Drain Current-Max (IDM) 68 A 60 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pbfree Code Yes
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Peak Reflow Temperature (Cel) 250
Power Dissipation Ambient-Max 60 W
Time@Peak Reflow Temperature-Max (s) 30

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