IRF523 vs IRF522-010 feature comparison

IRF523 Samsung Semiconductor

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IRF522-010 International Rectifier

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC INTERNATIONAL RECTIFIER CORP
Part Package Code SFM
Package Description TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 36 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 80 V 100 V
Drain Current-Max (ID) 8 A 8 A
Drain-source On Resistance-Max 0.36 Ω 0.36 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 60 W
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 32 A 32 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 57 ns
Turn-on Time-Max (ton) 58 ns
Base Number Matches 1 2
Pbfree Code No
Case Connection DRAIN

Compare IRF523 with alternatives

Compare IRF522-010 with alternatives