IRF522-001
vs
MTP10N10E
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
ON SEMICONDUCTOR
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
8 A
10 A
Drain-source On Resistance-Max
0.36 Ω
0.25 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e3
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
32 A
25 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
MATTE TIN OVER NICKEL
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
6
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Manufacturer Package Code
CASE 221A-09
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Avalanche Energy Rating (Eas)
60 mJ
JEDEC-95 Code
TO-220AB
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
240
Power Dissipation-Max (Abs)
75 W
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
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