IRF5210-018
vs
AUIRF5210STRR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
35 A
38 A
Drain-source On Resistance-Max
0.06 Ω
0.06 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
YES
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
120 mJ
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
170 W
Pulsed Drain Current-Max (IDM)
140 A
Reference Standard
AEC-Q101
Compare IRF5210-018 with alternatives
Compare AUIRF5210STRR with alternatives