IRF5210
vs
IRF5210STRRPBF
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SEMELAB LTD
|
INFINEON TECHNOLOGIES AG
|
Package Description |
FLANGE MOUNT, O-MBFM-P2
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
780 mJ
|
120 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
40 A
|
38 A
|
Drain-source On Resistance-Max |
0.07 Ω
|
0.06 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-3
|
TO-263AB
|
JESD-30 Code |
O-MBFM-P2
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
METAL
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
140 A
|
140 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Form |
PIN/PEG
|
GULL WING
|
Terminal Position |
BOTTOM
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
Factory Lead Time |
|
4 Weeks
|
Date Of Intro |
|
1996-08-14
|
Samacsys Manufacturer |
|
Infineon
|
Additional Feature |
|
HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation-Max (Abs) |
|
170 W
|
Terminal Finish |
|
Matte Tin (Sn) - with Nickel (Ni) barrier
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare IRF5210 with alternatives
Compare IRF5210STRRPBF with alternatives