IRF521-010
vs
MTP8N08
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
,
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE
|
Single
|
| DS Breakdown Voltage-Min |
80 V
|
|
| Drain Current-Max (ID) |
9.2 A
|
|
| Drain-source On Resistance-Max |
0.27 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSFM-T3
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
37 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
2
|
3
|
| Drain Current-Max (Abs) (ID) |
|
8 A
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
75 W
|
|
|
|
Compare IRF521-010 with alternatives