IRF521-001 vs IRF521-006 feature comparison

IRF521-001 Infineon Technologies AG

Buy Now Datasheet

IRF521-006 Infineon Technologies AG

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 80 V 80 V
Drain Current-Max (ID) 9.2 A 9.2 A
Drain-source On Resistance-Max 0.27 Ω 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 37 A 37 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 2 2

Compare IRF521-001 with alternatives

Compare IRF521-006 with alternatives