IRF520NSTRRPBF
vs
FQD13N10LTM
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Peak Reflow Temperature (Cel)
260
260
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
2
2
Pbfree Code
Part Package Code
DPAK
Package Description
DPAK-3
Pin Count
3
Manufacturer Package Code
TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
95 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
10 A
Drain-source On Resistance-Max
0.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
40 W
Pulsed Drain Current-Max (IDM)
40 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare IRF520NSTRRPBF with alternatives
Compare FQD13N10LTM with alternatives