IRF451
vs
IRF450
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
TT ELECTRONICS PLC
Reach Compliance Code
unknown
compliant
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
450 V
500 V
Drain Current-Max (ID)
13 A
13 A
Drain-source On Resistance-Max
0.4 Ω
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
52 A
52 A
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
NO
NO
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
7
Rohs Code
Package Description
HERMETIC SEALED, METAL, TO-3, 2 PIN
ECCN Code
EAR99
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IRF451 with alternatives
Compare IRF450 with alternatives