IRF3710PBF
vs
IRFZ46ZSTRLPBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
16 Weeks, 3 Days
4 Weeks
Samacsys Manufacturer
Infineon
Infineon
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
280 mJ
97 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
55 V
Drain Current-Max (ID)
57 A
51 A
Drain-source On Resistance-Max
0.023 Ω
0.0136 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
200 W
82 W
Pulsed Drain Current-Max (IDM)
180 A
200 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
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