IRF3710-018PBF vs RF1S45N06LESM feature comparison

IRF3710-018PBF Infineon Technologies AG

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RF1S45N06LESM Harris Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 60 V
Drain Current-Max (ID) 46 A 45 A
Drain-source On Resistance-Max 0.028 Ω 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN OVER NICKEL TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
HTS Code 8541.29.00.95
Additional Feature ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Operating Temperature-Max 175 °C
Power Dissipation Ambient-Max 142 W
Power Dissipation-Max (Abs) 142 W
Turn-off Time-Max (toff) 185 ns
Turn-on Time-Max (ton) 215 ns

Compare IRF3710-018PBF with alternatives

Compare RF1S45N06LESM with alternatives