IRF3707
vs
AONS36346
feature comparison
Rohs Code |
|
Yes
|
Part Life Cycle Code |
|
Active
|
Ihs Manufacturer |
|
ALPHA & OMEGA SEMICONDUCTOR LTD
|
Package Description |
|
SMALL OUTLINE, R-PDSO-F5
|
Reach Compliance Code |
|
unknown
|
ECCN Code |
|
EAR99
|
Avalanche Energy Rating (Eas) |
|
9 mJ
|
Case Connection |
|
DRAIN
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
30 V
|
Drain Current-Max (ID) |
|
60 A
|
Drain-source On Resistance-Max |
|
0.0095 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
|
35 pF
|
JESD-30 Code |
|
R-PDSO-F8
|
Number of Elements |
|
1
|
Number of Terminals |
|
8
|
Operating Mode |
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Polarity/Channel Type |
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
|
31 W
|
Pulsed Drain Current-Max (IDM) |
|
100 A
|
Surface Mount |
|
YES
|
Terminal Form |
|
FLAT
|
Terminal Position |
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
Base Number Matches |
|
1
|
|
|
|
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