IRF3610STRL
vs
SQM100N10-10_GE3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
End Of Life
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
VISHAY INTERTECHNOLOGY INC
Package Description
PLASTIC, D2PAK-3
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
460 mJ
280 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
103 A
100 A
Drain-source On Resistance-Max
0.0116 Ω
0.0105 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
410 A
400 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Rohs Code
Factory Lead Time
18 Weeks
Samacsys Manufacturer
Vishay
Operating Temperature-Max
175 °C
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Compare IRF3610STRL with alternatives
Compare SQM100N10-10_GE3 with alternatives