IRF350R1 vs JANHCA2N6768 feature comparison

IRF350R1 TT Electronics Power and Hybrid / Semelab Limited

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JANHCA2N6768 Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer SEMELAB LTD INFINEON TECHNOLOGIES AG
Part Package Code TO-3
Package Description FLANGE MOUNT, O-MBFM-P2 DIE-3
Pin Count 2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 11.3 mJ 700 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 400 V 400 V
Drain Current-Max (ID) 14 A 14 A
Drain-source On Resistance-Max 0.4 Ω 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2 S-XUUC-N3
JESD-609 Code e1 e0
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material METAL UNSPECIFIED
Package Shape ROUND SQUARE
Package Style FLANGE MOUNT UNCASED CHIP
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 56 A 56 A
Qualification Status Not Qualified Qualified
Surface Mount NO YES
Terminal Finish TIN SILVER COPPER TIN LEAD
Terminal Form PIN/PEG NO LEAD
Terminal Position BOTTOM UPPER
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Power Dissipation-Max (Abs) 150 W
Reference Standard MIL-19500/543G
Transistor Application SWITCHING

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