IRF350
vs
2N6768
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
SEMELAB LTD
Package Description
TO-3, 2 PIN
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
11.3 mJ
11.3 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
14 A
14 A
Drain-source On Resistance-Max
0.4 Ω
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
TO-204AA
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
56 A
56 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
13
3
Pbfree Code
No
Part Package Code
TO-3
Pin Count
2
Additional Feature
AVALANCHE RATED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IRF350 with alternatives
Compare 2N6768 with alternatives