IRF330-JQR-B
vs
2N6760TXV
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
TT ELECTRONICS PLC
|
INTERSIL CORP
|
Package Description |
FLANGE MOUNT, O-MBFM-P2
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
1.7 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
400 V
|
400 V
|
Drain Current-Max (ID) |
5.5 A
|
5.5 A
|
Drain-source On Resistance-Max |
1.22 Ω
|
1 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-204AA
|
TO-204AA
|
JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
22 A
|
8 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
PIN/PEG
|
PIN/PEG
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Additional Feature |
|
RADIATION HARDENED
|
Reference Standard |
|
MILITARY STANDARD (USA)
|
|
|
|
Compare IRF330-JQR-B with alternatives
Compare 2N6760TXV with alternatives