IRF330
vs
IRF330R1
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SEMELAB LTD
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE
|
Drain Current-Max (ID) |
5.5 A
|
5.5 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-609 Code |
e0
|
e1
|
Number of Elements |
1
|
1
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
75 W
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN SILVER COPPER
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
TO-3
|
Package Description |
|
FLANGE MOUNT, O-MBFM-P2
|
Pin Count |
|
2
|
Avalanche Energy Rating (Eas) |
|
1.7 mJ
|
Case Connection |
|
DRAIN
|
DS Breakdown Voltage-Min |
|
400 V
|
Drain-source On Resistance-Max |
|
1.22 Ω
|
JEDEC-95 Code |
|
TO-204AA
|
JESD-30 Code |
|
O-MBFM-P2
|
Number of Terminals |
|
2
|
Package Body Material |
|
METAL
|
Package Shape |
|
ROUND
|
Package Style |
|
FLANGE MOUNT
|
Pulsed Drain Current-Max (IDM) |
|
22 A
|
Qualification Status |
|
Not Qualified
|
Terminal Form |
|
PIN/PEG
|
Terminal Position |
|
BOTTOM
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
Compare IRF330 with alternatives
Compare IRF330R1 with alternatives