IRF253R
vs
JANTXV2N6766
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
THOMSON CONSUMER ELECTRONICS
|
INTERSIL CORP
|
Package Description |
,
|
TO-204AE, 2 PIN
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
Drain Current-Max (ID) |
25 A
|
30 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
150 W
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
Base Number Matches |
3
|
9
|
Part Package Code |
|
BFM
|
Pin Count |
|
2
|
HTS Code |
|
8541.29.00.95
|
Additional Feature |
|
RADIATION HARDENED
|
Case Connection |
|
DRAIN
|
DS Breakdown Voltage-Min |
|
200 V
|
Drain-source On Resistance-Max |
|
0.085 Ω
|
Feedback Cap-Max (Crss) |
|
500 pF
|
JEDEC-95 Code |
|
TO-204AE
|
JESD-30 Code |
|
O-MBFM-P2
|
Number of Terminals |
|
2
|
Package Body Material |
|
METAL
|
Package Shape |
|
ROUND
|
Package Style |
|
FLANGE MOUNT
|
Power Dissipation Ambient-Max |
|
150 W
|
Pulsed Drain Current-Max (IDM) |
|
60 A
|
Qualification Status |
|
Not Qualified
|
Reference Standard |
|
MILITARY STANDARD (USA)
|
Terminal Form |
|
PIN/PEG
|
Terminal Position |
|
BOTTOM
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
Turn-off Time-Max (toff) |
|
225 ns
|
Turn-on Time-Max (ton) |
|
135 ns
|
|
|
|
Compare JANTXV2N6766 with alternatives