IRF153
vs
2N6764
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERSIL CORP
MICROSEMI CORP
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
100 V
Drain Current-Max (ID)
33 A
38 A
Drain-source On Resistance-Max
0.08 Ω
0.065 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
TO-204AE
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
150 W
Power Dissipation-Max (Abs)
150 W
150 W
Pulsed Drain Current-Max (IDM)
132 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD OVER NICKEL
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
225 ns
Turn-on Time-Max (ton)
135 ns
Base Number Matches
2
13
Pbfree Code
Part Package Code
BFM
Package Description
TO-3, 2 PIN
Pin Count
2
Compare IRF153 with alternatives
Compare 2N6764 with alternatives