IRF152
vs
IRF153
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TT ELECTRONICS PLC
STMICROELECTRONICS
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
60 V
Drain Current-Max (ID)
40 A
33 A
Drain-source On Resistance-Max
0.08 Ω
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
TO-3
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e1
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
TIN LEAD
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Additional Feature
FAST SWITCHING
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
132 A
Transistor Application
SWITCHING
Compare IRF152 with alternatives
Compare IRF153 with alternatives