IRF151 vs IRF151 feature comparison

IRF151 Rochester Electronics LLC

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IRF151 Samsung Semiconductor

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 40 A 40 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0 e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 1 1
ECCN Code EAR99
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 150 W

Compare IRF151 with alternatives

Compare IRF151 with alternatives