IRF151
vs
IRF151
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
No
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
40 A
40 A
Drain-source On Resistance-Max
0.055 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
e0
Moisture Sensitivity Level
NOT SPECIFIED
Number of Elements
1
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
160 A
Qualification Status
COMMERCIAL
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Base Number Matches
1
1
ECCN Code
EAR99
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
150 W
Compare IRF151 with alternatives
Compare IRF151 with alternatives