IRF130 vs IRF130 feature comparison

IRF130 Rochester Electronics LLC

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IRF130 Intersil Corporation

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC INTERSIL CORP
Reach Compliance Code unknown not_compliant
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 14 A 14 A
Drain-source On Resistance-Max 0.16 Ω 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA TO-204AA
JESD-30 Code O-MBFM-P2 O-MBFM-P2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 56 A 56 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
ECCN Code EAR99
Additional Feature HIGH INPUT IMPEDANCE
Avalanche Energy Rating (Eas) 50 mJ
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 75 W

Compare IRF130 with alternatives

Compare IRF130 with alternatives