IRF120 vs IRF230EBPBF feature comparison

IRF120 FCI Semiconductor

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IRF230EBPBF International Rectifier

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Rohs Code No Yes
Part Life Cycle Code Contact Manufacturer Transferred
Ihs Manufacturer FIRST COMPONENTS INTERNATIONAL INTERNATIONAL RECTIFIER CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 8 A 9 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Base Number Matches 13 2
Pbfree Code Yes
Package Description FLANGE MOUNT, O-MBFM-P2
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 54 mJ
Case Connection DRAIN
DS Breakdown Voltage-Min 200 V
Drain-source On Resistance-Max 0.49 Ω
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
Number of Terminals 2
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Reference Standard CECC
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 115 ns

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