IPW65R080CFDAXK vs NVB072N65S3 feature comparison

IPW65R080CFDAXK Infineon Technologies AG

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NVB072N65S3 onsemi

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG ONSEMI
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 17 Weeks 42 Weeks
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 1160 mJ 214 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V 650 V
Drain Current-Max (ID) 43.3 A 44 A
Drain-source On Resistance-Max 0.08 Ω 0.072 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 137 A 110 A
Reference Standard AEC-Q101 AEC-Q101
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Manufacturer Package Code 418AJ
Date Of Intro 2018-12-14
Samacsys Manufacturer onsemi
Case Connection DRAIN
Feedback Cap-Max (Crss) 14.6 pF
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 312 W
Terminal Finish Matte Tin (Sn) - annealed

Compare IPW65R080CFDAXK with alternatives

Compare NVB072N65S3 with alternatives