IPW65R080CFDAXK
vs
NTHL082N65S3HF
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
ONSEMI
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
17 Weeks
|
14 Weeks
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Avalanche Energy Rating (Eas) |
1160 mJ
|
510 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
650 V
|
650 V
|
| Drain Current-Max (ID) |
43.3 A
|
40 A
|
| Drain-source On Resistance-Max |
0.08 Ω
|
0.082 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-247
|
TO-247
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
137 A
|
100 A
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Manufacturer Package Code |
|
340CX
|
| Samacsys Manufacturer |
|
onsemi
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max (Abs) |
|
313 W
|
| Terminal Finish |
|
Matte Tin (Sn) - annealed
|
|
|
|
Compare IPW65R080CFDAXK with alternatives
Compare NTHL082N65S3HF with alternatives