IPW65R080CFD vs IPB60R099C6ATMA1 feature comparison

IPW65R080CFD Infineon Technologies AG

Buy Now Datasheet

IPB60R099C6ATMA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes No
Rohs Code Yes Yes
Part Life Cycle Code Active Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-247 D2PAK
Package Description GREEN, PLASTIC PACKAGE-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 4
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 1160 mJ 796 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V 600 V
Drain Current-Max (ID) 43.3 A 37.9 A
Drain-source On Resistance-Max 0.08 Ω 0.099 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 391 W
Pulsed Drain Current-Max (IDM) 137 A 112 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 4 Weeks
Case Connection DRAIN
Moisture Sensitivity Level 1

Compare IPW65R080CFD with alternatives

Compare IPB60R099C6ATMA1 with alternatives