IPP90N06S4L04AKSA2
vs
IPD034N06N3G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-PSFM-T3
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Infineon
Avalanche Energy Rating (Eas)
331 mJ
149 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
90 A
100 A
Drain-source On Resistance-Max
0.0034 Ω
0.0034 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-252AA
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
360 A
400 A
Surface Mount
NO
YES
Terminal Finish
TIN
Tin (Sn)
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Part Package Code
TO-252AA
Pin Count
4
Moisture Sensitivity Level
1
Operating Temperature-Max
175 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
167 W
Qualification Status
Not Qualified
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Compare IPP90N06S4L04AKSA2 with alternatives
Compare IPD034N06N3G with alternatives