IPP085N06LG vs IPP80N06S2-08 feature comparison

IPP085N06LG Infineon Technologies AG

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IPP80N06S2-08 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 370 mJ 450 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 80 A 80 A
Drain-source On Resistance-Max 0.0085 Ω 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 188 W 215 W
Pulsed Drain Current-Max (IDM) 320 A 320 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Samacsys Manufacturer Infineon
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare IPP085N06LG with alternatives

Compare IPP80N06S2-08 with alternatives