IPP052N08N5 vs FDI047AN08A0 feature comparison

IPP052N08N5 Infineon Technologies AG

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FDI047AN08A0 Fairchild Semiconductor Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG FAIRCHILD SEMICONDUCTOR CORP
Package Description TO-220, 3 PIN TO-262AB, 3 PIN
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 84 mJ 475 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V 75 V
Drain Current-Max (ID) 80 A 80 A
Drain-source On Resistance-Max 0.0052 Ω 0.0047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-262AB
JESD-30 Code R-PSFM-T3 R-PSIP-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 320 A
Surface Mount NO NO
Terminal Finish Tin (Sn) MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pbfree Code Yes
Part Package Code TO-262AB
Pin Count 3
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 310 W
Qualification Status Not Qualified

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