IPI60R165CPXKSA1
vs
STF28N60M2
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Not Recommended
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
STMICROELECTRONICS
|
| Package Description |
IN-LINE, R-PSIP-T3
|
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
15 Weeks
|
16 Weeks
|
| Samacsys Manufacturer |
Infineon
|
STMicroelectronics
|
| Avalanche Energy Rating (Eas) |
522 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
600 V
|
|
| Drain Current-Max (ID) |
21 A
|
|
| Drain-source On Resistance-Max |
0.165 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JEDEC-95 Code |
TO-262AA
|
|
| JESD-30 Code |
R-PSIP-T3
|
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Pulsed Drain Current-Max (IDM) |
61 A
|
|
| Surface Mount |
NO
|
|
| Terminal Finish |
Tin (Sn)
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare IPI60R165CPXKSA1 with alternatives
Compare STF28N60M2 with alternatives