IPD90N06S4L03ATMA1 vs IPB037N06N3G feature comparison

IPD90N06S4L03ATMA1 Infineon Technologies AG

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IPB037N06N3G Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature ULTRA LOW RESISTANCE AVALANCHE RATED
Avalanche Energy Rating (Eas) 331 mJ 165 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 90 A 90 A
Drain-source On Resistance-Max 0.0035 Ω 0.0037 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 360 A 360 A
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code D2PAK
Pin Count 4
HTS Code 8541.29.00.95
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 188 W
Qualification Status Not Qualified
Terminal Finish Tin (Sn)
Transistor Application SWITCHING

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Compare IPB037N06N3G with alternatives