IPD35N10S3L26XT vs IPD35N10S3L-26 feature comparison

IPD35N10S3L26XT Infineon Technologies AG

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IPD35N10S3L-26 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 53 Weeks, 1 Day
Avalanche Energy Rating (Eas) 175 mJ 175 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 35 A 35 A
Drain-source On Resistance-Max 0.0319 Ω 0.0319 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 75 pF 75 pF
JEDEC-95 Code TO-252 TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 71 W 71 W
Pulsed Drain Current-Max (IDM) 140 A 140 A
Reference Standard AEC-Q101; IEC-68-1 AEC-Q101; IEC-68-1
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code TO-252
Pin Count 4
Samacsys Manufacturer Infineon
Case Connection DRAIN
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish Tin (Sn)

Compare IPD35N10S3L26XT with alternatives

Compare IPD35N10S3L-26 with alternatives