IPD35N10S3L26ATMA1 vs IRF5M3710PBF feature comparison

IPD35N10S3L26ATMA1 Infineon Technologies AG

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IRF5M3710PBF International Rectifier

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 175 mJ 350 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 35 A 35 A
Drain-source On Resistance-Max 0.0319 Ω 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 75 pF
JEDEC-95 Code TO-252 TO-254AA
JESD-30 Code R-PSSO-G2 S-MSFM-P3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 71 W
Pulsed Drain Current-Max (IDM) 140 A 140 A
Reference Standard AEC-Q101; IEC-68-1
Surface Mount YES NO
Terminal Finish Tin (Sn)
Terminal Form GULL WING PIN/PEG
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Pbfree Code Yes
Part Package Code TO-254AA
Pin Count 3
Qualification Status Not Qualified
Transistor Application SWITCHING

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Compare IRF5M3710PBF with alternatives